IR51H224

IC HALF BRIDGE SELF-OSC 9-SIP

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SeekIC No. : 003566593 Detail

IR51H224: IC HALF BRIDGE SELF-OSC 9-SIP

floor Price/Ceiling Price

Part Number:
IR51H224
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Type: Half Bridge Input Type: Inverting
Number of Outputs: 1 Package / Case : SSOP-20
On-State Resistance: 1.1 Ohm Current - Output / Channel: 1.1A
Current - Peak Output: - Voltage - Supply: 10 V ~ 15.6 V
Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole
Package / Case: 9-SIP (7 leads) Supplier Device Package: 9-SIP, 7 Leads    

Description

Series: -
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Inverting
Current - Peak Output: -
Type: Half Bridge
Mounting Type: Through Hole
Packaging: Tube
Manufacturer: International Rectifier
Current - Output / Channel: 1.1A
On-State Resistance: 1.1 Ohm
Voltage - Supply: 10 V ~ 15.6 V
Package / Case: 9-SIP (7 leads)
Supplier Device Package: 9-SIP, 7 Leads


Features:

· Output Power MOSFETs in half-bridge configuration
· High side gate drive designed for bootstrap operation
· Bootstrap diode integrated into package (HD type)
· Accurate timing control for both Power MOSFETs
    Matched delay to get 50% duty cycle
    Matched deadtime of 1.2us
· Internal oscillator with programmable frequency
· 15.6V Zener clamped Vcc for offline operation
· Half-bridge output is out of phase with RT
· Micropower startup



Specifications

Symbol Definition Minimum Maximum Units
VIN High voltage supply -224 - 0.3 250 V
-320 - 0.3 400
-420 - 0.3 500
VB High side floating supply Vo - 0.3 Vo +2.5
VO Half-bridge output -0.3 VIN + 0.3
VRT RT voltage -0.3 Vcc + 0.3
VCT CT voltage -0.3 Vcc + 0.3
Icc Supply current (note 1) - 25 mA
IRT RT output current - 5 5
dV/dt Peak diode recovery - 3.5 V/ns
PD Package power dissipation @ TA +25°C - 2.00 W
RthJA Thermal resistance, junction to ambient - 60 /W
TJ Junction temperature -55 150
TS
Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR51H224 are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays of the IR51H224 for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 500 volts.




Parameters:

Technical/Catalog InformationIR51H224
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / Case9-SIP (7 leads)
Mounting TypeThrough Hole
TypeHalf Bridge
Voltage - Supply10 V ~ 15.6 V
On-State Resistance1.1 Ohm
Current - Output / Channel1.1A
Current - Peak Output-
PackagingTube
Input TypeInverting
Number of Outputs1
Operating Temperature-40°C ~ 125°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IR51H224
IR51H224



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