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IR51H(D)320

Features: • Output Power MOSFETs in half-bridge configuration• High side gate drive designed for bootstrap operation• Bootstrap diode integrated into package (HD type)• Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1....

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SeekIC No. : 004376285 Detail

IR51H(D)320: Features: • Output Power MOSFETs in half-bridge configuration• High side gate drive designed for bootstrap operation• Bootstrap diode integrated into package (HD type)• Accur...

IR51H(D)320 Data Sheet

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Part Number:
IR51H(D)320
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Output Power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
f =1/1.4 * (R T+ 75Ω ) *  C T
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• Micropower startup



Specifications

Symbol Definition Minimum Maximum Units
VIN High voltage supply
-224
-320
-420
- 0.3
- 0.3
- 0.3
250
400
500
V
VB High side floating supply
Vo - 0.3
Vo +2.5
VO Half-bridge output
-0.3
VIN + 0.3
VRT RT voltage
- 0.3
Vcc + 0.3
VCT CT voltage
- 0.3
Vcc + 0.3
Icc Supply current (note 1)
-
25
mA
IRT RT output current
- 5
5
dV/dt Peak diode recovery
-
3.5
V/ns
PD Package power dissipation @ TA +25°C
-
2.00
W
RthJA Thermal resistance, junction to ambient
-
60
°C/W
TJ Junction temperature
-55
150
°C
TS Storage temperature
-55
150
TL Lead temperature (soldering, 10 seconds)
-
300

NOTE 1:
This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics Section




Description

The IR51H(D)320 are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays of the IR51H(D)320 for the high and low side




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