MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms
IPI50R399CP: MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.399 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Technical/Catalog Information | IPI50R399CP |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 399 mOhm @ 4.9A, 10V |
Input Capacitance (Ciss) @ Vds | 890pF @ 100V |
Power - Max | 83W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI50R399CP IPI50R399CP |