MOSFET OptiMOS-T PWR TRANS 100V 50A
IPI50N10S3L-16: MOSFET OptiMOS-T PWR TRANS 100V 50A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Continuous Drain Current : | 50 A | Resistance Drain-Source RDS (on) : | 15.7 mOhms | ||
Configuration : | Single | Maximum Operating Temperature : | + 175 C | ||
Package / Case : | TO-262 | Packaging : | Tube |
Technical/Catalog Information | IPI50N10S3L-16 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 15.7 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 4180pF @ 25V |
Power - Max | 100W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI50N10S3L 16 IPI50N10S3L16 |