MOSFET N-CH 100V 20A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Symbol | Value | Conditions | Unit |
Continuous drain current | ID | 20 | TC=25 °C | A |
14 | TC=100 °C | |||
Pulsed drain current2) | I D,pulse | 80 | TC=25 °C | |
Avalanche energy, single pulse | EAS | 29 | ID=20 A, RGS=25 | mJ |
Reverse diode dv /dt | dv /dt | 6 | I D=20 A, VDS=80 V, di /dt =100 A/s, Tj,max=175 °C |
kV/s |
Gate source voltage3) | VGS | ±20 | V | |
Power dissipation | Ptot | 44 | TC=25 °C | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |