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IPI50R199CP

MOSFET N-CH 500V 17A TO262

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SeekIC No. : 003434022 Detail

IPI50R199CP: MOSFET N-CH 500V 17A TO262

IPI50R199CP Data Sheet

floor Price/Ceiling Price

US $ .99~.99 / Piece | Get Latest Price
Part Number:
IPI50R199CP
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10000
  • Unit Price
  • $.99
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 17A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) @ Vgs: 45nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1800pF @ 100V
Power - Max: 139W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 17A
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Series: CoolMOS™
Power - Max: 139W
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO262-3
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Input Capacitance (Ciss) @ Vds: 1800pF @ 100V


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