IPB80N06S3L-08

MOSFET N-CH 55V 80A

product image

IPB80N06S3L-08 Picture
SeekIC No. : 00162452 Detail

IPB80N06S3L-08: MOSFET N-CH 55V 80A

floor Price/Ceiling Price

Part Number:
IPB80N06S3L-08
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 7.6 m Ohms


Features:

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B



Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
80
A
T C=100 ,
VGS=10 V2)
61
Pulsed drain current2)
I D,pulse
T C=25
320
Avalanche energy, single pulse2)
EAS
I D=80A
170
mJ

 Drain gate voltage2)

 VDG

 

 55

 V

Gate source voltage4)
VGS
±16
V
Power dissipation
Ptot
T C=25
105
W
Operating and storage temperature
T j, T stg
-55 ... +175

 IEC climatic category; DIN IEC 68-1

 

 

 55/175/56

 



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Tapes, Adhesives
803
Hardware, Fasteners, Accessories
LED Products
Crystals and Oscillators
Programmers, Development Systems
View more