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IPB80N06S3L-08

MOSFET N-CH 55V 80A

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SeekIC No. : 00162452 Detail

IPB80N06S3L-08: MOSFET N-CH 55V 80A

IPB80N06S3L-08 Data Sheet

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Part Number:
IPB80N06S3L-08
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 7.6 m Ohms


Features:

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
80
A
T C=100 ,
VGS=10 V2)
61
Pulsed drain current2)
I D,pulse
T C=25
320
Avalanche energy, single pulse2)
EAS
I D=80A
170
mJ

 Drain gate voltage2)

 VDG

 

 55

 V

Gate source voltage4)
VGS
±16
V
Power dissipation
Ptot
T C=25
105
W
Operating and storage temperature
T j, T stg
-55 ... +175

 IEC climatic category; DIN IEC 68-1

 

 

 55/175/56

  



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