MOSFET N-CH 55V 80A
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Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)R...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 7.6 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
80 |
A |
T C=100 , VGS=10 V2) |
61 | |||
Pulsed drain current2) |
I D,pulse |
T C=25 |
320 | |
Avalanche energy, single pulse2) |
EAS |
I D=80A |
170 |
mJ |
Drain gate voltage2) |
VDG |
|
55 |
V |
Gate source voltage4) |
VGS |
±16 |
V | |
Power dissipation |
Ptot |
T C=25 |
105 |
W |
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
||
IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |