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IPB80N06S3-07

MOSFET OptiMOS-T2 PWR TRANS 55V 80A

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SeekIC No. : 00160895 Detail

IPB80N06S3-07: MOSFET OptiMOS-T2 PWR TRANS 55V 80A

IPB80N06S3-07 Data Sheet

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Part Number:
IPB80N06S3-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Parameters:

Technical/Catalog InformationIPB80N06S3-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 51A, 10V
Input Capacitance (Ciss) @ Vds 7768pF @ 25V
Power - Max135W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N06S3 07
IPB80N06S307



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