IPB80N06S2L-11, US $ .57-.92 , Infineon Technologies, IPB80N06S2L-11 DataSheet download, circuit diagram from SeekIC.com

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IPB80N06S2L-11: MOSFET OptiMOS PWR TRANST 55V 80A

IPB80N06S2L-11 Data Sheet

US $ .57~.92 / Piece | Get Latest Price

Part Number:: IPB80N06S2L-11
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$.92
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$.57

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Upload time: 2024/11/21

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Recent History
What is this?

IPB80CN10N G evaluate
Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)R...
IPB80N03S4L-02 evaluate
US $.55 - 1 / Piece

MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A 2.4mOhms
IPB80N03S4L-03 evaluate
US $.4 - .73 / Piece

MOSFET OPTIMOS-T2 POWER-TRANS

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	10.7 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 10.7 m Ohms

Parameters:

Technical/Catalog Information	IPB80N06S2L-11
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	10.7 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	2075pF @ 25V
Power - Max	158W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB80N06S2L 11 IPB80N06S2L11

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IPB80N06S2L-11

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