Position: Home  > All Categories> Integrated Circuits (ICs) > IPB80N06S2-05

IPB80N06S2-05

MOSFET OptiMOS PWR TRANST 55V 80A

product image

IPB80N06S2-05 Picture
See larger image
SeekIC No. : 00157467 Detail

IPB80N06S2-05: MOSFET OptiMOS PWR TRANST 55V 80A

IPB80N06S2-05 Data Sheet

floor Price/Ceiling Price

US $ .67~.9 / Piece | Get Latest Price
Part Number:
IPB80N06S2-05
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.9
  • $.74
  • $.7
  • $.67
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 4.8 m Ohms


Parameters:

Technical/Catalog InformationIPB80N06S2-05
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5110pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N06S2 05
IPB80N06S205



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Memory Cards, Modules
WT32
VTL5C7
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Tapes, Adhesives
803
AC452-2
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more