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IPB80N04S3-06

MOSFET OPTIMOS -T PWR-TRANS 40V 80A 5.8mOhMS

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IPB80N04S3-06: MOSFET OPTIMOS -T PWR-TRANS 40V 80A 5.8mOhMS

IPB80N04S3-06 Data Sheet

floor Price/Ceiling Price

US $ .62~1 / Piece | Get Latest Price
Part Number:
IPB80N04S3-06
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
  • Unit Price
  • $1
  • $.9
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  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 5.8 m Ohms


Parameters:

Technical/Catalog InformationIPB80N04S3-06
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N04S3 06
IPB80N04S306



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