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IPB80N04S2-H4

MOSFET OptiMOS PWR TRANST 40V 80A

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SeekIC No. : 00157626 Detail

IPB80N04S2-H4: MOSFET OptiMOS PWR TRANST 40V 80A

IPB80N04S2-H4 Data Sheet

floor Price/Ceiling Price

US $ .56~.75 / Piece | Get Latest Price
Part Number:
IPB80N04S2-H4
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.75
  • $.62
  • $.58
  • $.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 3.7 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25,VGS=10 V
80
A
 
80
A
Pulsed drain current
ID,pulse
TC=25
320
A
Avalanche energy, single pulse2
EAS
ID=80A
660
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 .. +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPB80N04S2-H4
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs148nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N04S2 H4
IPB80N04S2H4



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