Features: ・Input impedance is high, and not necessary to consider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. Ron=2(TYP)・High speed switching.・Small package for easy mounting.Applicationhigh speed ...
INJ0003AX: Features: ・Input impedance is high, and not necessary to consider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. R...
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・Input impedance is high, and not necessary to consider a drive electric current.
・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V
・Low on Resistance. Ron=2(TYP)
・High speed switching.
・Small package for easy mounting.
SYMBOL |
PARAMETER |
RATING |
UNIT | |||
INJ0003AT2 |
INJ0003AU1 |
INJ0003AM1 |
INJ0003AC1 | |||
VDSS |
Drain-source voltage |
-20 |
V | |||
VGSS |
Gate-source voltage |
±8 |
V | |||
ID |
Drain current |
-200 |
mA | |||
PD |
Total power dissipation (Ta=25) |
125() |
150 |
200 |
mW | |
Tch |
Channel temperature |
+125 |
+150 |
|||
Tstg |
Range of Storage temperature |
-55~+125 |
-55~+150 |
INJ0003AX is a Silicon P-channel MOSFET.
This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.