Features: ・Input impedance is high, and not necessary toconsider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. Ron=7(TYP)・High speed switching.・Small package for easy mounting.Application·high speed ...
INJ0001AX: Features: ・Input impedance is high, and not necessary toconsider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. Ro...
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SYMBOL | PARAMETER |
RATING |
UNIT | |||
INJ0001AT2 |
INJ0001AU1 |
INJ0001AM1 |
INJ0001AC1 | |||
VDSS | Drain-source voltage |
-50 |
V | |||
VGSS | Gate-source voltage |
±8 |
V | |||
ID | Drain current |
-100 |
mA | |||
PD | Total power dissipation(Ta=25) |
125() |
150 |
200 |
mW | |
Tch | Channel temperature |
+125 |
+150 |
|||
Tstg | Range of Storage temperature |
-55~+125 |
-55~+125 |
INJ0001AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.