Features: ・Input impedance is high, and not necessary to consider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. Ron=3(TYP)・High speed switching.・Small package for easy mounting.Applicationhigh speed ...
INJ0002AX: Features: ・Input impedance is high, and not necessary to consider a drive electric current.・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V・Low on Resistance. R...
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SYMBOL |
PARAMETER |
RATING |
UNIT | |||
INJ0002AT2 |
INJ0002AU1 |
INJ0002AM1 |
INJ0002AC1 | |||
VDSS |
Drain-source voltage |
-30 |
V | |||
VGSS |
Gate-source voltage |
±8 |
V | |||
ID |
Drain current |
-200 |
mA | |||
PC |
Total power dissipation (Ta=25) |
125() |
150 |
200 |
mW | |
Tch |
Channel temperature |
+125 |
+150 |
|||
Tstg |
Range of Storage temperature |
-55~+125 |
-55~+150 |
INJ0002AX is a Silicon P-channel MOSFET. INJ0002AT2 INJ0002AM1
This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.