Features: • Ultra-Miniature Package• Single 5 V Supply (29ÊmA)• 21.5 dB Gain (1.9 GHz)• 8.0 dBm P1dB (1.9 GHz)• Positive Gain Slope• Unconditionally StableSpecifications Symbol Parameter Units AbsoluteMaximum[1] Vd Supply Voltage, to Ground ...
INA-54063: Features: • Ultra-Miniature Package• Single 5 V Supply (29ÊmA)• 21.5 dB Gain (1.9 GHz)• 8.0 dBm P1dB (1.9 GHz)• Positive Gain Slope• Unconditionally StableS...
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Symbol |
Parameter |
Units | Absolute Maximum[1] |
Vd | Supply Voltage, to Ground | V | 12 |
Pin | CW RF Input Power | dBm | 13 |
Tj | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
Thermal Resistance[2]: j-c = 165°C/W |
Notes:
1. Operation of this device above any one of these limits may cause permanent damage.
2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).
Hewlett-Packard's INA-54063 is a Silicon monolithic amplifier that offers excellent gain and power output for applications to 3.0ÊGHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package.
With its wide bandwidth and high linearity, the INA-54063 is an excellent candidate for DBS IF applications. It also features a unique gain curve which increases over the range from 1 to 2ÊGHz. This gain slope compensates for the gain rolloff found in typical receiver systems.
The INA-54063 is fabricated using HP's 30 GHz fMAX ISOSAT™ Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.