Features: • Ultra-Miniature Package• Internally Biased, Single 5 V Supply (12 mA)• 20.5 dB Gain• 3 dB NF• Unconditionally StableApplication• Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner ApplicationsSpeci...
INA-51063: Features: • Ultra-Miniature Package• Internally Biased, Single 5 V Supply (12 mA)• 20.5 dB Gain• 3 dB NF• Unconditionally StableApplication• Amplifier for Cellula...
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Symbol |
Parameter |
Units | Absolute Maximum[1] |
VCC | Supply Voltage, to ground | V | 12 |
Pin | CW RF Input Power | dBm | +13 |
Tj | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
Thermal Resistance[2]: j-c = 200°C/W |
Notes:
1. Operation of this device above any one of these limits may cause permanent damage.
2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).
Hewlett-Packard's INA-51063 is a Silicon monolithic amplifier that offers excellent gain and noise figure for applications to 2.4 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.
The INA-51063 uses a topology which is internally biased, eliminating the need for external components and providing decreased sensitivity to ground inductance.
The INA-51063 is fabricated using HP's 30 GHz fMAX ISOSATTM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.