Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and DriverAmplifier for Cellular,Cordless, Special MobileRadio, PCS, ISM, WirelessLAN, DBS, TVRO, and TVT...
INA-34063: Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and D...
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Symbol | Parameter | Units | Absolute Maximum[1] |
Vd | Device Voltage, RF output to ground |
V | 6.0 |
Pin | CW RF Input Power | dBm | +7.0 |
Tj | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
Agilent's INA-34063 is a Silicon RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged in an ultraminiature SOT-363 package, it requires half of the board space of a SOT-143 package.
With its wide bandwidth and high linearity, the INA-34063 is suitable as a driver amplifier for various applications. The INA-34063 also features high reverse isolation, making it an excellent candidate for LO buffer applications.
The INA-34063 is fabricated using Agilent's 30 GHzfmax, ISOSAT™ Silicon-bipolar process that uses nitride, self alignment,submicrometer lithography,trench isolation, ion implantation, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity and reliability.