INA-34063 Selling Leads, Price trend, INA-34063 DataSheet download, circuit diagram from SeekIC.com

Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and DriverAmplifier for Cellular,Cordless, Special MobileRadio, PCS, ISM, WirelessLAN, DBS, TVRO, and TVT...

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SeekIC No. : 004375450 Detail

INA-34063: Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and D...

INA-34063 Data Sheet

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Part Number:: INA-34063
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Description

Features:

• +8 dBm P1 dB at 1.9 GHz
• 21 dB Gain at 1.9 GHz
• High Isolation 32 dB at 1.9 GHz
• Single +3V Supply
• Unconditionally Stable

Application

• LO Buffer and Driver Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Units	Absolute Maximum^[1]
V_d	Device Voltage, RF output to ground	V	6.0
P_in	CW RF Input Power	dBm	+7.0
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to 150

Description

Agilent's INA-34063 is a Silicon RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged in an ultraminiature SOT-363 package, it requires half of the board space of a SOT-143 package.

With its wide bandwidth and high linearity, the INA-34063 is suitable as a driver amplifier for various applications. The INA-34063 also features high reverse isolation, making it an excellent candidate for LO buffer applications.

The INA-34063 is fabricated using Agilent's 30 GHzfmax, ISOSAT™ Silicon-bipolar process that uses nitride, self alignment,submicrometer lithography,trench isolation, ion implantation, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity and reliability.

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