INA-30311

Features: • Internally Biased, Single 3 V Supply (6 mA)• 3.5 dB NF• 13 dB Gain• Unconditionally StableApplication• LNA or IF Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN ApplicationsSpecifications Symbol Parameter Units...

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INA-30311 Picture
SeekIC No. : 004375437 Detail

INA-30311: Features: • Internally Biased, Single 3 V Supply (6 mA)• 3.5 dB NF• 13 dB Gain• Unconditionally StableApplication• LNA or IF Amplifier for Cellular, Cordless, Special ...

floor Price/Ceiling Price

Part Number:
INA-30311
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Internally Biased, Single 3 V Supply (6 mA)
• 3.5 dB NF
• 13 dB Gain
• Unconditionally Stable



Application

• LNA or IF Amplifier for Cellular,
  Cordless, Special Mobile Radio, PCS, ISM,
  and Wireless LAN Applications



Specifications

Symbol

Parameter

Units Absolute
Maximum[1]
VCC Device Voltage, to ground V 12
Pin CW RF Input Power dBm +13
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2]:
j-c = 550°C/W

Notes:
  1. Operation of this device above any one of these limits may cause permanent damage.
  2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).




Description

Hewlett-Packard's INA-30311 is a Silicon monolithic amplifier for applications to 1.0 GHz. Packaged in a miniature SOT-143 package, it requires very little board space.

The INA-30311 uses an internally biased topology which eliminates the need for external components and provides decreased sensitivity to ground inductance.

The INA-30311 is designed with an output impedance that varies from near 200 at low frequencies to near 50 at higher frequencies. This provides a matching advantage for IF circuits, as well as improved power efficiency, making it suitable for battery powered designs.

The INA-30311 is fabricated using HP's 30 GHz fMAX ISOSATTM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.




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