Features: • Internally Biased, Single 3 V Supply (6 mA)• 3.5 dB NF• 13 dB Gain• Unconditionally StableApplication• LNA or IF Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN ApplicationsSpecifications Symbol Parameter Units...
INA-30311: Features: • Internally Biased, Single 3 V Supply (6 mA)• 3.5 dB NF• 13 dB Gain• Unconditionally StableApplication• LNA or IF Amplifier for Cellular, Cordless, Special ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Units | Absolute Maximum[1] |
VCC | Device Voltage, to ground | V | 12 |
Pin | CW RF Input Power | dBm | +13 |
Tj | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
Thermal Resistance[2]: j-c = 550°C/W |
Notes:
1. Operation of this device above any one of these limits may cause permanent damage.
2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).
Hewlett-Packard's INA-30311 is a Silicon monolithic amplifier for applications to 1.0 GHz. Packaged in a miniature SOT-143 package, it requires very little board space.
The INA-30311 uses an internally biased topology which eliminates the need for external components and provides decreased sensitivity to ground inductance.
The INA-30311 is designed with an output impedance that varies from near 200 at low frequencies to near 50 at higher frequencies. This provides a matching advantage for IF circuits, as well as improved power efficiency, making it suitable for battery powered designs.
The INA-30311 is fabricated using HP's 30 GHz fMAX ISOSATTM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.