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INA-03184

Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.6 dB Typical at 1.5 GHz• High Gain: 25 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 2.5 GHz• Unconditionally Stable (k>1)• Low Power Dissipation: 10 mA Bias• Low Cost Plastic PackageSpecificatio...

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INA-03184: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.6 dB Typical at 1.5 GHz• High Gain: 25 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 2.5 GHz• Unconditionally ...

INA-03184 Data Sheet

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Part Number:
INA-03184
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Cascadable 50 Gain Block
• Low Noise Figure: 2.6 dB Typical at 1.5 GHz
• High Gain: 25 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 2.5 GHz
• Unconditionally Stable (k>1)
• Low Power Dissipation: 10 mA Bias
• Low Cost Plastic Package


Specifications

Parameter Absolute Maximum[1]
Device Current 25 mA
Power Dissipation[2] 200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature 65 to 150°C
Thermal Resistance:
jc = 100°C/W
Notes:
  1. Permanent damage may occur if any of these limits are exceeded.
  2. Derate at 10 mW/°C for TC > 130°C.


Description

The INA-03184 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise IF or RF amplification with minimum power consumption.

The INA series of MMICs of the INA-03184 is fabricated using HP's 10 GHz fT, 25ÊGHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.




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