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IC62VV25616LL

Features: • High-speed access times: 55, 70, 100 ns• CMOS low power operation ICC1=10mA (typical)* operating ISB2=1µA (typical)* CMOS standby• Typical values are measured at VCC=1.8V, TA=25°C• TTL compatible interface levels• Single 1.65V-2.2V Vcc power supply&#...

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SeekIC No. : 004370431 Detail

IC62VV25616LL: Features: • High-speed access times: 55, 70, 100 ns• CMOS low power operation ICC1=10mA (typical)* operating ISB2=1µA (typical)* CMOS standby• Typical values are measured at ...

IC62VV25616LL Data Sheet

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Part Number:
IC62VV25616LL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High-speed access times: 55, 70, 100 ns
• CMOS low power operation ICC1=10mA (typical)* operating ISB2=1µA (typical)* CMOS standby
• Typical values are measured at VCC=1.8V, TA=25°C
• TTL compatible interface levels
• Single 1.65V-2.2V Vcc power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
VALUE
UNIT
VTERM
Terminal Voltage with Respect to GND
0.5 to Vcc + 0.4
V
TBIAS
Temperature Under Bias
40 to +85
°C
VCC
Vcc related to GND
0.3 to +4.0
V
TSTG
Storage Temperature
65 to +150
°C
PT
Power Dissipation
1.0
W



Description

The IC62VV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE of the IC62VV25616LL is HIGH (deselected) or both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IC62VV25616LL are packaged in the JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA.




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