Features: • Access times of 55, 70, 100 ns• CMOS Low power operation: ICC=15mA (typical)* operation ISB2=2A (typical)* standby• Low data retention voltage: 1.5V (min.)• Output Enable (OE) and Two Chip Enables (CE1, CE2) inputs for ease in applications• TTL compatible ...
IC62LV1008L: Features: • Access times of 55, 70, 100 ns• CMOS Low power operation: ICC=15mA (typical)* operation ISB2=2A (typical)* standby• Low data retention voltage: 1.5V (min.)• Outpu...
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Features: • High-speed access time: 35, 45, 55, 70 ns• Low active power: 450 mW (typic...
Features: • High-speed access times: 55, 70, 100 ns• CMOS low power operation--60mW (t...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to Vcc + 0.5 | V |
VCC | Vcc related to GND | 0.3 to +4.0 | V |
TBIAS | Temperature Under Bias | 40 to +85 | °C |
TSTG | Storage Temperature | 65 to +150 | °C |
PT | Power Dissipation | 1 | W |
The IC62LV1008L is a low voltage, 1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using ICSI's low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable ( WE) controls both writing and reading of the memory. The IC62LV1008L are available in know good die form and 48-pin 8*10mm TF-BGA.