IC62LV12816DL

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other  onditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The IC62LV12816DL are lowpower, 2,097,152 bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE1 of the IC62LV12816DL is HIGH or when CE2 is low (deselected) or both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE1, CE2 and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IC62LV12816DL are packaged in the JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TFBGA.