Features: • High-speed access time: 35, 45, 55, 70 ns• Low active power: 450 mW (typical)• Low standby power: 150 µW (typical) CMOS standby• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications• Fully static operation: no clock or...
IC62C1024AL: Features: • High-speed access time: 35, 45, 55, 70 ns• Low active power: 450 mW (typical)• Low standby power: 150 µW (typical) CMOS standby• Output Enable (OE) and two ...
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Features: • Access times of 55, 70, 100 ns• CMOS Low power operation: ICC=15mA (typica...
Features: • Access times of 45, 55, and 70 ns• Low active power: 60 mW (typical)•...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to + 7.0 | V |
TBIAS | Temperature Under Bias | 45 to + 85 | |
TSTG | Storage Temperature | 65 to + 150 | |
PT | Power Dissipation | 1.5 | W |
IOUT | DC Output Current (LOW) | 20 | mA |
·The ICSI IC62C1024AL is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process couple with innovative circuit design techniques, yields higher performance and low power consumption devices.
·When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
·Easy memory expansion of the IC62C1024AL is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
·The IC62C1024L is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages.