Features: • Access times of 45, 55, and 70 ns• Low active power: 60 mW (typical)• Low standby power: 15 µW (typical) CMOS standby• Low data retention voltage: 2V (min.)• Available in Low Power (-L) and Ultra Low Power (-LL)• Output Enable (OE) and two Chip...
IC62LV1024AL: Features: • Access times of 45, 55, and 70 ns• Low active power: 60 mW (typical)• Low standby power: 15 µW (typical) CMOS standby• Low data retention voltage: 2V (min.)...
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Features: • High-speed access time: 35, 45, 55, 70 ns• Low active power: 450 mW (typic...
Features: • Access times of 55, 70, 100 ns• CMOS Low power operation: ICC=15mA (typica...
Symbol | Parameter | Value | Unit |
VTERM VCC TBIAS TSTG PT |
Terminal Voltage with Respect to GND Vcc related to GND Temperature Under Bias Storage Temperature Power Dissipation |
0.5 to +3.6 0.3 to +3.6 40 to +85 65 to +150 0.7 |
V V W |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IC62LV1024AL are low power and low Vcc,131,072-word by 8-bit CMOS static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IC62LV1024AL are available in 32-pin 8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin 6*8mm TF-BGA.