IC62VV1008LL

Features: • Access times of 70, 100 ns• CMOS Low power operation: ICC=10mA (typical)* operation ISB2=3A (typical)* standby• Low data retention voltage: 1.2V (min.)• Output Enable (OE) and Two Chip Enables (CE1, CE2) inputs for ease in applications•TTL compatible input...

product image

IC62VV1008LL Picture
SeekIC No. : 004370429 Detail

IC62VV1008LL: Features: • Access times of 70, 100 ns• CMOS Low power operation: ICC=10mA (typical)* operation ISB2=3A (typical)* standby• Low data retention voltage: 1.2V (min.)• Output En...

floor Price/Ceiling Price

Part Number:
IC62VV1008LL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Access times of 70, 100 ns
• CMOS Low power operation:
  ICC=10mA (typical)* operation
  ISB2=3A (typical)* standby
• Low data retention voltage: 1.2V (min.)
• Output Enable (OE) and Two Chip Enables
  (CE1, CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
- No clock or refresh reguired
• Single 1.65V-2.2V power supply
• Wafer level burn in test mode
• Available in the know good die form and
  48-pin 8*10mm TF-BGA
* Typical values are measured at VCC=1.8V, TA=25°C



Specifications

Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND 0.5 to Vcc + 0.5 V
VCC Vcc related to GND 0.3 to +4.0 V
TBIAS Temperature Under Bias 40 to +85 °C
TSTG Storage Temperature 65 to +150 °C
PT Power Dissipation 1 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.



Description

The IC62VV1008LL is a low voltage, 1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using ICSI's low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

When CE1 of the IC62VV1008LL is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable ( WE) controls both writing and reading of the memory.

The IC62VV1008LLare available in know good die form and 48-pin 8*10mm TF-BGA.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Prototyping Products
DE1
Undefined Category
Connectors, Interconnects
View more