HYR1612840G-653

The Direct Rambus™ RIMM™ HYR1612840G-653 module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

The Direct Rambus RIMM HYR1612840G-653 module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The RDRAM architecture of the HYR1612840G-653 enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports up to four simultaneous transactions per device.