HYR1612820G-845

• High speed 800, 711 & 600 MHz RDRAM storage
• 184 edge connector pads with 1 mm pad spacing
• Maximum module PCB size: 133.5 mm * 31.75 mm * 1.37 mm (5.25" * 1.25" * 0.05")
• Each RDRAM has 32 banks, for a total of 512, 256 or 128 banks on each 256/288 MB, 128/144MB or 64/72 MB module respectively.
• Gold plated edge connector pad contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5 V supply (± 5%)
• Low power and powerdown self refresh modes
• Separate Row and Column buses for higher efficiency

The Direct Rambus™ RIMM™ HYR1612820G-845 module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

The Direct Rambus RIMM HYR1612820G-845 module consists of 144 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed CMOS DRAMs organized as 8M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The RDRAM architecture of the HYR1612820G-845 enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports up to four simultaneous transactions per device.