HY64UD16322M

Features:

• CMOS Process Technology
• 2M x 16 bit Organization
• TTL compatible and Tri-state outputs
• Deep Power Down : Memory cell data hold invalid
• Standard pin configuration : 48-FBGA
• Data mask function by /LB, /UB



Pinout




Specifications

Symbol	Parameter	Rating	Unit	Remark
VIN,VOUT	Input/Output Voltage	-0.3 to Vdd+0.3	V
Vdd	Power Supply	-0.3 to 3.6	V
TA	Ambient Temperature	-25 to 85		HY64UD16322M-E
		-40 to 85		HY64UD16322M-I
TSTG	Storage Temperature	-55 to 150
PD	Power Dissipation	1.0	W
TSOLDER	Ball Soldering Temperature & Time	260•10	•sec

Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
    the device. This is stress rating only and the functional operation of the device under these or any
   other conditions above those indicated in the operation of this specification is not implied. Exposure to
   the absolute maximum rating conditions for extended period may affect reliability.



Description

The HY64UD16322M is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64UD16322M delivers the high-density low power SRAM capability to the high-speed low power system.