HY64UD16322M

Features: • CMOS Process Technology• 2M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin configuration : 48-FBGA• Data mask function by /LB, /UBPinoutSpecifications Symbol Parame...

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HY64UD16322M Picture
SeekIC No. : 004368405 Detail

HY64UD16322M: Features: • CMOS Process Technology• 2M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin confi...

floor Price/Ceiling Price

Part Number:
HY64UD16322M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• CMOS Process Technology
• 2M x 16 bit Organization
• TTL compatible and Tri-state outputs
• Deep Power Down : Memory cell data hold invalid
• Standard pin configuration : 48-FBGA
• Data mask function by /LB, /UB



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit

Remark

VIN,VOUT
Input/Output Voltage
-0.3 to Vdd+0.3
V
Vdd
Power Supply
-0.3 to 3.6
V
TA
Ambient Temperature
-25 to 85
HY64UD16322M-E
-40 to 85
HY64UD16322M-I
TSTG
Storage Temperature
-55 to 150
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260•10
•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
    the device. This is stress rating only and the functional operation of the device under these or any
   other conditions above those indicated in the operation of this specification is not implied. Exposure to
   the absolute maximum rating conditions for extended period may affect reliability.



Description

The HY64UD16322M is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64UD16322M delivers the high-density low power SRAM capability to the high-speed low power system.




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