Features: • CMOS Process Technology• 1M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin configuration : 48-FBGA• Data mask function by /LB, /UBSpecifications Symbol Parameter ...
HY64LD16162M: Features: • CMOS Process Technology• 1M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin confi...
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Features: • CMOS Process Technology• 1M x 16 bit Organization• TTL compatible an...
Features: • CMOS Process Technology• 2M x 16 bit Organization• TTL compatible an...
Symbol |
Parameter |
Rating |
Unit |
Remark |
VIN,VOUT |
Input/Output Voltage |
-0.3 to Vdd+0.3 |
V |
|
Vdd |
Power Supply |
-0.3 to 3.6 |
V |
|
TA |
Ambient Temperature |
-25 to 85 |
HY64LD16162M-E | |
-40 to 85 |
HY64LD16162M-I | |||
TSTG |
Storage Temperature |
-55 to 150 |
||
PD |
Power Dissipation |
1.0 |
W |
|
TSOLDER |
Ball Soldering Temperature & Time |
260•10 |
•sec |
The HY64LD16162M is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64LD16162M delivers the high-density low power SRAM capability to the high-speed low power system.