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HY64SD16162B

Features: • CMOS Process Technology• 1M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin configuration : 48-FBGA(6mmX8mm)• Data mask function by /LB, /UB• Separated I/O Power Supply ...

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SeekIC No. : 004368401 Detail

HY64SD16162B: Features: • CMOS Process Technology• 1M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin confi...

HY64SD16162B Data Sheet

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Part Number:
HY64SD16162B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• CMOS Process Technology
• 1M x 16 bit Organization
• TTL compatible and Tri-state outputs
• Deep Power Down : Memory cell data hold invalid
• Standard pin configuration : 48-FBGA(6mmX8mm)
• Data mask function by /LB, /UB
• Separated I/O Power Supply : Vddq


Specifications

Symbol Parameter Rating Unit Remark
VIN Input Voltage -0.3 to Vdd+0.3 V  
VOUT Output Voltage -0.3 to Vddq+0.3 V  
Vdd Core Power Supply -0.3 to 3.6 V  
Vddq I/O Power Supply -0.3 to 3.6 V  
TA Ambient Temperature -25 to 85 HY64SD16162B-E
-40 to 85 HY64SD16162B-I
TSTG Storage Temperature -55 to 150  
PD Power Dissipation 1.0 W  
TSOLDER Ball Soldering Temperature & Time 260•10 •sec  

Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.




Description

The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64SD16162B delivers the high-density low power SRAM capability to the high-speed low power system.




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