HY64UD16162B

Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.

The HY64UD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64UD16162B delivers the high-density low power SRAM capability to the high-speed low power system.