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HMS51232M4L

Features: · Access time : 55, 70ns· High-density 2MByte design· High-reliability, low-power design· Single +5V ±0.5V power supply· Low data retention voltage : 2V(min)· Three state output and TTL-compatible· FR4-PCB design· Low profile 72-Pin SIMMPinoutSpecifications PARAMETER SYMBOL ...

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SeekIC No. : 004364858 Detail

HMS51232M4L: Features: · Access time : 55, 70ns· High-density 2MByte design· High-reliability, low-power design· Single +5V ±0.5V power supply· Low data retention voltage : 2V(min)· Three state output and TTL-co...

HMS51232M4L Data Sheet

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Part Number:
HMS51232M4L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Access time : 55, 70ns
· High-density 2MByte design
· High-reliability, low-power design
· Single +5V ±0.5V power supply
· Low data retention voltage : 2V(min)
· Three state output and TTL-compatible
· FR4-PCB design
· Low profile 72-Pin SIMM




Pinout

Connection Diagram




Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
4W
Storage Temperature
TSTG
-65 to +150
Operating Temperature
TA
0 to +70
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4- printed circuit board.

The HMS51232M4L also support low data retention voltage for battery back-up operations with low data retention current. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1 and /CE_LL1) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module HMS51232M4L is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.






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