Features: · Access time : 15, 17, 20 and 25ns· High-density 2MByte design· High-reliability, low-power design· Single +3V ±0.3V power supply· Three state output and LVTTL-compatible· FR4-PCB design· Low profile 68-Pin JLCCPinoutSpecificationsVoltage on Any Pin Relative to Vss VIN,OUT ...........-0...
HMS51232J4V: Features: · Access time : 15, 17, 20 and 25ns· High-density 2MByte design· High-reliability, low-power design· Single +3V ±0.3V power supply· Three state output and LVTTL-compatible· FR4-PCB design·...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Access time : 10, 12 and 15ns· High-density 2MByte design· High-reliability, low-power...
Features: · Access time : 10, 12 and 15ns· High-density 2MByte design· High-reliability, low-power...
Features: Access times : 10, 12, 15, 17 and 20High-density 2Mbyte design High-reliability, high-s...
The HMS51232J4V is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4-printed circuit board.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory HMS51232J4V input and output.
Data is written into the SRAM memory HMS51232J4V when write enable (/WE) and chip enable (/CE) inputs are both LOW.Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module HMS51232J4V is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible..