HMS51232J4V

Features: · Access time : 15, 17, 20 and 25ns· High-density 2MByte design· High-reliability, low-power design· Single +3V ±0.3V power supply· Three state output and LVTTL-compatible· FR4-PCB design· Low profile 68-Pin JLCCPinoutSpecificationsVoltage on Any Pin Relative to Vss VIN,OUT ...........-0...

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HMS51232J4V Picture
SeekIC No. : 004364856 Detail

HMS51232J4V: Features: · Access time : 15, 17, 20 and 25ns· High-density 2MByte design· High-reliability, low-power design· Single +3V ±0.3V power supply· Three state output and LVTTL-compatible· FR4-PCB design·...

floor Price/Ceiling Price

Part Number:
HMS51232J4V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Description



Features:

· Access time : 15, 17, 20 and 25ns
· High-density 2MByte design
· High-reliability, low-power design
· Single +3V ±0.3V power supply
· Three state output and LVTTL-compatible
· FR4-PCB design
· Low profile 68-Pin JLCC





Pinout

  Connection Diagram




Specifications

Voltage on Any Pin Relative to Vss VIN,OUT ...........-0.5V to +4.6V
Voltage on Vcc Supply Relative to Vss VCC............ -0.5V to +4.6V
Power Dissipation PD............................................................. 4W
Storage Temperature TSTG................................. -65 to +150
Operating Temperature TA .......................................0 to +70





Description

The HMS51232J4V is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4-printed circuit board.

Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory HMS51232J4V input and output.

Data is written into the SRAM memory HMS51232J4V when write enable (/WE) and chip enable (/CE) inputs are both LOW.Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS51232J4V is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible..






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