Features: · Access time : 10, 12 and 15ns· High-density 2MByte design· High-reliability, low-power design· Single +5V ±0.5V power supply· Three state output and TTL-compatible· FR4-PCB design· Low profile 68-Pin JLCCPinoutSpecifications PARAMETER SYMBOL RATING Voltage on Any Pin Relative...
HMS51232J4: Features: · Access time : 10, 12 and 15ns· High-density 2MByte design· High-reliability, low-power design· Single +5V ±0.5V power supply· Three state output and TTL-compatible· FR4-PCB design· Low p...
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Features: · Access time : 10, 12 and 15ns· High-density 2MByte design· High-reliability, low-power...
Features: · Access time : 15, 17, 20 and 25ns· High-density 2MByte design· High-reliability, low-p...
Features: Access times : 10, 12, 15, 17 and 20High-density 2Mbyte design High-reliability, high-s...
PARAMETER | SYMBOL | RATING |
Voltage on Any Pin Relative to Vss | VIN ,OUT | -0.5V to +7.0V |
Voltage on Vcc Supply Relative to Vss | Vcc | -0.5V to +7.0V |
Power Dissipation | PD | 4W |
Storage Temperature | TSTG | -55 to 125 |
Operating Temperature | TA | 0to +70 |
The HMS51232J4 is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit
configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4-printed circuit oard.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module HMS51232J4's 4 bytes independently.
Output enable(/OE) and write enable(/WE) can set the memory HMS51232J4 input and output.
Data is written into the SRAM memory HMS51232J4 when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module HMS51232J4 is designed as multiple power and ground pin. All module components may be owered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.