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HMS3224M3

Features: · Access times : 12, 15 and 20ns· High-density 768Kbit design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· 56-pin, low-active power design· All inputs and outputs are TTL-compatible· Industry-standard pinout· FR4-PCB design· Part identificationPinoutSpecification...

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SeekIC No. : 004364845 Detail

HMS3224M3: Features: · Access times : 12, 15 and 20ns· High-density 768Kbit design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· 56-pin, low-active power design· All inputs and outputs ...

HMS3224M3 Data Sheet

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Part Number:
HMS3224M3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Access times : 12, 15 and 20ns
· High-density 768Kbit design
· High-reliability, high-speed design
· Single + 5V ±0.5V power supply
· 56-pin, low-active power design
· All inputs and outputs are TTL-compatible
· Industry-standard pinout
· FR4-PCB design
· Part identification



Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN,OUT -0.5V to +7.0V
Voltage on Any Pin Relative to Vss VCC -0.5V to +7.0V
Power Dissipation PD 3W
Storage Temperature TSTG -65oC to +150oC
Operating Temperature TA 0oC to +70oC

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HMS3224M3/Z3 is a high-speed static random access memory (SRAM) module containing 32,768 words organized in a x24-bit configuration. The module consists of three 32K x 8 SRAMs mounted on a 56-pin, singlesided, FR4-printed circuit board.

Writing to the device is accomplished when the chip enable (/CE) and write enable(/WE) inputs are both LOW. Data on the input/output pins (DQ0 through DQ23) of the device HMS3224M3 is written into the memory location specified on the address pins (A0 through A14).

Reading the device HMS3224M3 is accomplished by taking the chip enable (/CE) and output enable(/OE) LOW while write enable(/WE) remains HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the input/output pins.

The input/output pins remains in a high-impedance state unless the module HMS3224M3 is selected, outputs are enabled, and write enable is HIGH.




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