HMC-XDH158

Features: ·Output Power: -6 dBm·Wide Input Power Range: 0 to +5 dBm·High Fo Isolation: 30 dBc·Low Conversion Loss: 8 dB·Die Size: 1.8 x 0.8 x 0.1 mmApplication• Short-Haul / High Capacity Radios• Point-to-Point Radio• Test & Measurement Equipment• SATCOM• Military...

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SeekIC No. : 004364601 Detail

HMC-XDH158: Features: ·Output Power: -6 dBm·Wide Input Power Range: 0 to +5 dBm·High Fo Isolation: 30 dBc·Low Conversion Loss: 8 dB·Die Size: 1.8 x 0.8 x 0.1 mmApplication• Short-Haul / High Capacity Radi...

floor Price/Ceiling Price

Part Number:
HMC-XDH158
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Output Power: -6 dBm
·Wide Input Power Range: 0 to +5 dBm
·High Fo Isolation: 30 dBc
·Low Conversion Loss: 8 dB
·Die Size: 1.8 x 0.8 x 0.1 mm





Application

• Short-Haul / High Capacity Radios
• Point-to-Point Radio
• Test & Measurement Equipment
• SATCOM
• Military and Secure Communications





Specifications

RF Input Level +7 dBm
Supply Voltage (Vdd1, Vdd2) +5 Vdc
Gate Voltage (Vgg1, Vgg2) -1 to 0.3 Vdc
Channel Temperature 180
Storage Temperature -65 to +150
Operating Temperature -55 to +85





Description

The HMC-XDH158 is a monolithic X4 Active Frequency Multiplier which utilizes GaAs High Electron Mobility Transistor (HEMT) technology and exhibits low conversion loss and high Fo isolation. This wideband multiplier is ideal for use in LO multiplier chains for high capacity and SATCOM radios yielding reduced parts count vs. traditional approaches. All bond pads and the die backside are Ti/Au metallized and the HEMT devices are fully passivated for reliable operation. The HMC-XDH158 X4 Active Frequency Multiplier MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.






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