Features: ·Output Power: -6 dBm·Wide Input Power Range: 0 to +5 dBm·High Fo Isolation: 30 dBc·Low Conversion Loss: 8 dB·Die Size: 1.8 x 0.8 x 0.1 mmApplication• Short-Haul / High Capacity Radios• Point-to-Point Radio• Test & Measurement Equipment• SATCOM• Military...
HMC-XDH158: Features: ·Output Power: -6 dBm·Wide Input Power Range: 0 to +5 dBm·High Fo Isolation: 30 dBc·Low Conversion Loss: 8 dB·Die Size: 1.8 x 0.8 x 0.1 mmApplication• Short-Haul / High Capacity Radi...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
RF Input Level | +7 dBm |
Supply Voltage (Vdd1, Vdd2) | +5 Vdc |
Gate Voltage (Vgg1, Vgg2) | -1 to 0.3 Vdc |
Channel Temperature | 180 |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC-XDH158 is a monolithic X4 Active Frequency Multiplier which utilizes GaAs High Electron Mobility Transistor (HEMT) technology and exhibits low conversion loss and high Fo isolation. This wideband multiplier is ideal for use in LO multiplier chains for high capacity and SATCOM radios yielding reduced parts count vs. traditional approaches. All bond pads and the die backside are Ti/Au metallized and the HEMT devices are fully passivated for reliable operation. The HMC-XDH158 X4 Active Frequency Multiplier MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.