Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V @ 55 mADie Size: 3.0 x 1.435 x 0.1 mmApplication• Wideband Communications Receivers• Surveillance Systems• Point-to-Point Radios• Point-to-Multi-Point Radios• Military &a...
HMC-ALH102: Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V @ 55 mADie Size: 3.0 x 1.435 x 0.1 mmApplication• Wideband Communications Receivers• Sur...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: ·Noise Figure: 4 dB·Gain: 11.5 dB·P1dB Output Power: +15 dBm·Supply Voltage: +4V @ 60 mA...
Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature |
+3.7 Vdc -1 to +0.3 Vdc 5 dBm 180 |
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 11.6 dB of gain at 10 GHz, 2.5 dB noise fi gure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMCALH102 amplifi er is ideal for integration into Multi- Chip-Modules (MCMs) due to its small size.