HMC-ABH209

Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input/Output·Die Size: 2.2 x 1.22 x 0.1 mmApplication• Short Haul / High Capacity Links• Wireless LAN Bridges• Military & SpaceSpecificationsDrain Bias Voltage ........ +5.5 VdcGain B...

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SeekIC No. : 004364482 Detail

HMC-ABH209: Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input/Output·Die Size: 2.2 x 1.22 x 0.1 mmApplication• Short Haul / High Capacity Links• Wire...

floor Price/Ceiling Price

Part Number:
HMC-ABH209
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Output IP3: +25 dBm
·P1dB: +16 dBm
·Gain: 13 dB
·Supply Voltage: +5 V
·50 Ohm Matched Input/Output
·Die Size: 2.2 x 1.22 x 0.1 mm



Application

• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space



Specifications

Drain Bias Voltage ........   +5.5 Vdc
Gain Bias Voltage......   -1 to +0.3 Vdc
RF Input Power ........... 10 dBm
Storage Temperature ..   -65 to + 150
Chennel Temperature ........+180



Description

The HMC-ABH209 is a high dynamic range, two stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 55 and 65 GHz. The HMCABH209 provides 13 dB of gain, and an output power of +16 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH209 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.




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