Features: Conversion Loss: 13 dBPassive: No DC Bias RequiredInput Drive: +13 dBmHigh Fo Isolation: 30 dBDie Size: 2.2 x 0.65 x 0.1 mmApplicationThis HMC-XDB112 is ideal for:• Point-to-Point Radios• VSAT• Test Instrumentation• Military & Space• Clock GenerationDesc...
HMC-XDB112: Features: Conversion Loss: 13 dBPassive: No DC Bias RequiredInput Drive: +13 dBmHigh Fo Isolation: 30 dBDie Size: 2.2 x 0.65 x 0.1 mmApplicationThis HMC-XDB112 is ideal for:• Point-to-Point Ra...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
The HMC-XDB112 is a monolithic Passive Frequency Doubler which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology, and is targeted to high volume applications where frequency doubling of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the HBT devices are fully passivated for reliable operation. The HMC-XDB112 Passive Doubler MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.