HMC-SDD112

Features: Low Insertion Loss: 2 dBHigh Isolation: 30 dBDC Blocked RF I/OsIntegrated DC Bias CircuitryDie Size: 2.01 x 0.975 x 0.1 mmApplication• FCC E-Band Communication Systems• Short-Haul / High Capacity Radios• Automotive Radar• Test & Measurement Equipment• SA...

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SeekIC No. : 004364594 Detail

HMC-SDD112: Features: Low Insertion Loss: 2 dBHigh Isolation: 30 dBDC Blocked RF I/OsIntegrated DC Bias CircuitryDie Size: 2.01 x 0.975 x 0.1 mmApplication• FCC E-Band Communication Systems• Short-H...

floor Price/Ceiling Price

Part Number:
HMC-SDD112
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Low Insertion Loss: 2 dB
High Isolation: 30 dB
DC Blocked RF I/Os
Integrated DC Bias Circuitry
Die Size: 2.01 x 0.975 x 0.1 mm



Application

• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
• SATCOM
• Sensors



Specifications

Parameter
Min.
Typ.
Max.
Units
Frequency Range
55 - 86
GHz
Insertion Loss
5
3
dB
Isolation
25
30
dB
Return Loss ON State
12
dB
Current (+5 V) ON State
22
mA
Current (-5 V) OFF State
-63
nA



Description

The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.




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