Features: Low Insertion Loss: 2 dBHigh Isolation: 30 dBDC Blocked RF I/OsIntegrated DC Bias CircuitryDie Size: 2.01 x 0.975 x 0.1 mmApplication• FCC E-Band Communication Systems• Short-Haul / High Capacity Radios• Automotive Radar• Test & Measurement Equipment• SA...
HMC-SDD112: Features: Low Insertion Loss: 2 dBHigh Isolation: 30 dBDC Blocked RF I/OsIntegrated DC Bias CircuitryDie Size: 2.01 x 0.975 x 0.1 mmApplication• FCC E-Band Communication Systems• Short-H...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
Parameter |
Min. |
Typ. |
Max. |
Units |
Frequency Range |
55 - 86 |
GHz | ||
Insertion Loss |
5 |
3 |
dB | |
Isolation |
25 |
30 |
dB | |
Return Loss ON State |
12 |
dB | ||
Current (+5 V) ON State |
22 |
mA | ||
Current (-5 V) OFF State |
-63 |
nA |
The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.