Features: ·Wide IF Bandwidth: DC - 3 GHz·RF Frequency: 54 to 64 GHz·LO Frequency: 27 to 32 GHz·High Image Rejection: 30 dB·Passive; No DC Bias Required·Die Size: 1.54 x 1.41 x 0.1 mmApplicationThis HMC-MDB218 is ideal for:• Short-Haul / High Capacity Radios• SATCOM• Military Rada...
HMC-MDB218: Features: ·Wide IF Bandwidth: DC - 3 GHz·RF Frequency: 54 to 64 GHz·LO Frequency: 27 to 32 GHz·High Image Rejection: 30 dB·Passive; No DC Bias Required·Die Size: 1.54 x 1.41 x 0.1 mmApplicationThis ...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
LO Drive 16 dBm
Storage Temperature -65 to 150
Operating Temperature -55 to 85
The HMC-MDB218 is a sub-harmonically pumped (x2)MMIC Mixer which can be used as either an image reject mixer (IRM) or a single sideband upconverter.This passive MMIC mixer is fabricated with GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB218 Sub Harmonic IRM is compatible with conventional die attach methods,as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.