HMC-MDB218

Features: ·Wide IF Bandwidth: DC - 3 GHz·RF Frequency: 54 to 64 GHz·LO Frequency: 27 to 32 GHz·High Image Rejection: 30 dB·Passive; No DC Bias Required·Die Size: 1.54 x 1.41 x 0.1 mmApplicationThis HMC-MDB218 is ideal for:• Short-Haul / High Capacity Radios• SATCOM• Military Rada...

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SeekIC No. : 004364593 Detail

HMC-MDB218: Features: ·Wide IF Bandwidth: DC - 3 GHz·RF Frequency: 54 to 64 GHz·LO Frequency: 27 to 32 GHz·High Image Rejection: 30 dB·Passive; No DC Bias Required·Die Size: 1.54 x 1.41 x 0.1 mmApplicationThis ...

floor Price/Ceiling Price

Part Number:
HMC-MDB218
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Wide IF Bandwidth: DC - 3 GHz
·RF Frequency: 54 to 64 GHz
·LO Frequency: 27 to 32 GHz
·High Image Rejection: 30 dB
·Passive; No DC Bias Required
·Die Size: 1.54 x 1.41 x 0.1 mm



Application

This HMC-MDB218 is ideal for:
• Short-Haul / High Capacity Radios
• SATCOM
• Military Radar, ECM & EW
• Sensors
• Test & Measurement Equipment



Specifications

LO Drive                                16 dBm
Storage Temperature        -65   to 150
Operating Temperature     -55   to 85




Description

The HMC-MDB218 is a sub-harmonically pumped (x2)MMIC Mixer which can be used as either an image reject mixer (IRM) or a single sideband upconverter.This passive MMIC mixer is fabricated with GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB218 Sub Harmonic IRM is compatible with conventional die attach methods,as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.




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