Features: ·Wide IF Bandwidth: DC - 5 GHz·High Image Rejection: 25 dB·High LO to RF Isolation: 35 dB·Passive: No DC Bias Required·Die Size: 2.2 x 2.0 x 0.1 mmApplication• Point-to-Point Radios• VSAT• Military Radar, ECM & EW• Test & Measurement Equipment• SATCO...
HMC-MDB172: Features: ·Wide IF Bandwidth: DC - 5 GHz·High Image Rejection: 25 dB·High LO to RF Isolation: 35 dB·Passive: No DC Bias Required·Die Size: 2.2 x 2.0 x 0.1 mmApplication• Point-to-Point Radios&...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
The HMC-MDB172 is a monolithic I/Q Mixer which can be used as either an image reject mixer (IRM) or a single sideband upconverter. This passive MMIC is fabricated with GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation.
The HMC-MDB172 I/Q MMIC Mixer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.