Features: ·Output IP3: +37 dBm·P1dB: +29 dBm·Gain: 17 dB·Supply Voltage: +5V·50 Ohm Matched Input/Output·Die Size: 3.70 x 2.62 x 0.1 mmApplicationThis HMC-APH462 is ideal for:• Point-to-Point Radios• Point-to-Multi-Point Radios• VSAT• Military & SpaceSpecificationsDrain...
HMC-APH462: Features: ·Output IP3: +37 dBm·P1dB: +29 dBm·Gain: 17 dB·Supply Voltage: +5V·50 Ohm Matched Input/Output·Die Size: 3.70 x 2.62 x 0.1 mmApplicationThis HMC-APH462 is ideal for:• Point-to-Point ...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
The HMC-APH462 is a high dynamic range, two stage GaAs HEMT MMIC 0.8 Watt Power Amplifi er which operates between 15 and 27 GHz. The product provides 17 dB of gain, and an output power of +29 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-APH462 GaAs HEMT MMIC 1 Watt Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.