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HMC-ALH509

Features: · Noise Figure: 5 dB· P1dB: +7 dBm· Gain: 14 dB· Supply Voltage: +2V· 50 Ohm Matched Input/Output· Die Size: 3.20 x 1.60 x 0.1 mmApplication• Short Haul / High Capacity Links• Wireless LANs• Automotive Radar• Military & Space• E-Band Communication System...

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SeekIC No. : 004364501 Detail

HMC-ALH509: Features: · Noise Figure: 5 dB· P1dB: +7 dBm· Gain: 14 dB· Supply Voltage: +2V· 50 Ohm Matched Input/Output· Die Size: 3.20 x 1.60 x 0.1 mmApplication• Short Haul / High Capacity Links• ...

HMC-ALH509 Data Sheet

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Part Number:
HMC-ALH509
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Noise Figure: 5 dB
· P1dB: +7 dBm
· Gain: 14 dB
· Supply Voltage: +2V
· 50 Ohm Matched Input/Output
· Die Size: 3.20 x 1.60 x 0.1 mm




Application

• Short Haul / High Capacity Links
• Wireless LANs
• Automotive Radar
• Military & Space
• E-Band Communication Systems




Specifications

Drain Bias Voltage +3 Vdc
Gate Bias Voltage -0.8 to +0.2 Vdc
RF Input Power -5 dBm
Thermal Resistance
(channel to die bottom)		 123 /W
Storage Temperature -65 to +150
Operating Temperature -55 to +85





Description

The HMC-ALH509 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.


This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making HMC-ALH509 ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.






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