Features: · Noise Figure: 5 dB· P1dB: +7 dBm· Gain: 14 dB· Supply Voltage: +2V· 50 Ohm Matched Input/Output· Die Size: 3.20 x 1.60 x 0.1 mmApplication• Short Haul / High Capacity Links• Wireless LANs• Automotive Radar• Military & Space• E-Band Communication System...
HMC-ALH509: Features: · Noise Figure: 5 dB· P1dB: +7 dBm· Gain: 14 dB· Supply Voltage: +2V· 50 Ohm Matched Input/Output· Die Size: 3.20 x 1.60 x 0.1 mmApplication• Short Haul / High Capacity Links• ...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
Drain Bias Voltage | +3 Vdc |
Gate Bias Voltage | -0.8 to +0.2 Vdc |
RF Input Power | -5 dBm |
Thermal Resistance (channel to die bottom) |
123 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC-ALH509 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making HMC-ALH509 ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.