Features: ·Noise Figure: 3.9 dB @ 28 GHz·Gain: 9 dB·P1dB Output Power: +12 dBm @ 28 GHz·Supply Voltage: +5V @ 45 mA·Die Size: 1.6 × 1.6 × 0.1 mmSpecifications Drain Bias VoltageDrain Bias CurrentRF Input PowerChannel TemperatureStorage TemperatureOperating Temperature +5.5 Vdc60 mA10 dBm180 ...
HMC-ALH445: Features: ·Noise Figure: 3.9 dB @ 28 GHz·Gain: 9 dB·P1dB Output Power: +12 dBm @ 28 GHz·Supply Voltage: +5V @ 45 mA·Die Size: 1.6 × 1.6 × 0.1 mmSpecifications Drain Bias VoltageDrain Bias Curre...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
Drain Bias Voltage Drain Bias Current RF Input Power Channel Temperature Storage Temperature Operating Temperature |
+5.5 Vdc 60 mA 10 dBm 180 -65 to +150 -55 to +85 |
The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplii er die which operates between 18 and 40 GHz. The amplii er provides 9 dB of gain, 3.9 dB noise i gure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The ampliier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.