HMC-ALH444

Features: ·Noise Figure: 1.75 dB @ 10 GHz·Gain: 17 dB·P1dB Output Power: +19 dBm @ 5 GHz·Supply Voltage: +5V @ 55 mA·Die Size: 2.64 x 1.64 x 0.1 mmApplication• Wideband Communication Systems• Surveillance Systems• Point-to-Point Radios• Point-to-Multi-Point Radios• Mi...

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SeekIC No. : 004364496 Detail

HMC-ALH444: Features: ·Noise Figure: 1.75 dB @ 10 GHz·Gain: 17 dB·P1dB Output Power: +19 dBm @ 5 GHz·Supply Voltage: +5V @ 55 mA·Die Size: 2.64 x 1.64 x 0.1 mmApplication• Wideband Communication Systems&#...

floor Price/Ceiling Price

Part Number:
HMC-ALH444
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Noise Figure: 1.75 dB @ 10 GHz
·Gain: 17 dB
·P1dB Output Power: +19 dBm @ 5 GHz
·Supply Voltage: +5V @ 55 mA
·Die Size: 2.64 x 1.64 x 0.1 mm



Application

• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
   * VSAT



Specifications

Drain Bias Voltage +5.5 Vdc
RF Input Power 12 dBm
Gate Bias Voltage Vgg1 -1 to 0.3 Vdc
Gate Bias Voltage Vgg2 0 to 2.5 Vdc
Channel Temperature 180
Storage Temperature -65 to +150
Operating Temperature -55 to +85



Description

The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifi er die which operates between 1 and 12 GHz. The  HMC-ALH444 amplifi er provides 17 dB of gain, 1.5 dB noise fi gure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.




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