Features: ·Noise Figure: 1.75 dB @ 10 GHz·Gain: 17 dB·P1dB Output Power: +19 dBm @ 5 GHz·Supply Voltage: +5V @ 55 mA·Die Size: 2.64 x 1.64 x 0.1 mmApplication• Wideband Communication Systems• Surveillance Systems• Point-to-Point Radios• Point-to-Multi-Point Radios• Mi...
HMC-ALH444: Features: ·Noise Figure: 1.75 dB @ 10 GHz·Gain: 17 dB·P1dB Output Power: +19 dBm @ 5 GHz·Supply Voltage: +5V @ 55 mA·Die Size: 2.64 x 1.64 x 0.1 mmApplication• Wideband Communication Systems...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
Drain Bias Voltage | +5.5 Vdc |
RF Input Power | 12 dBm |
Gate Bias Voltage Vgg1 | -1 to 0.3 Vdc |
Gate Bias Voltage Vgg2 | 0 to 2.5 Vdc |
Channel Temperature | 180 |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifi er die which operates between 1 and 12 GHz. The HMC-ALH444 amplifi er provides 17 dB of gain, 1.5 dB noise fi gure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.