HMC-ALH382

Features: ·Noise Figure: 3.8 dB·P1dB: +12 dBm·Gain: 21 dB·Supply Voltage: +2.5V·50 Ohm Matched Input/Output·Die Size: 1.55 x 0.73 x 0.1 mmApplicationThis HMC-ALH382 is ideal for:• Short Haul / High Capacity Links• Wireless LANs• Military & SpaceSpecifications Drain Bias ...

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SeekIC No. : 004364494 Detail

HMC-ALH382: Features: ·Noise Figure: 3.8 dB·P1dB: +12 dBm·Gain: 21 dB·Supply Voltage: +2.5V·50 Ohm Matched Input/Output·Die Size: 1.55 x 0.73 x 0.1 mmApplicationThis HMC-ALH382 is ideal for:• Short Haul /...

floor Price/Ceiling Price

Part Number:
HMC-ALH382
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Noise Figure: 3.8 dB
·P1dB: +12 dBm
·Gain: 21 dB
·Supply Voltage: +2.5V
·50 Ohm Matched Input/Output
·Die Size: 1.55 x 0.73 x 0.1 mm





Application

This HMC-ALH382 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Military & Space





Specifications

Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power -5 dBm
Storage Temperature -65 to +150
Operating Temperature -55 to +85





Description

The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.


This HMC-ALH382 versatile LNA is compatible with conventional die attach methods, as well as thermocompression thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.



The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifi er (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain,4 dB of noise fi gure and an output power of +12 dBm at 1dB compression from a +2.5V supplyvoltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment andcontacted with RF probes.






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