Features: ·Noise Figure: 3 dB·Gain: 20 dB·P1dB Output Power: +12 dBm·Supply Voltage: +2.5V @ 52 mA·Die Size: 1.80×0.73×0.1 mmApplication· Point-to-Point Radios· Point-to-Multi-Point Radios· VSAT· Test Equipment & Sensors· Military & SpaceSpecifications Drain Bias Voltage +5 Vdc Ga...
HMC-ALH313: Features: ·Noise Figure: 3 dB·Gain: 20 dB·P1dB Output Power: +12 dBm·Supply Voltage: +2.5V @ 52 mA·Die Size: 1.80×0.73×0.1 mmApplication· Point-to-Point Radios· Point-to-Multi-Point Radios· VSAT· Te...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
Drain Bias Voltage | +5 Vdc |
Gate Bias Voltage | -1 to +0.3 Vdc |
RF Input Power | -3 dBm |
Channel Temperature | 180 |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplii er die which operates between 27 and 33 GHz. The HMC-ALH313 amplii er provides 20 dB of gain, a 3 dB noise i gure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplii er die is ideal for use as a LNA or driver amplii er, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) .