HM-65883

Features:

• This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Full CMOS Design
• Six Transistor Memory Cell
• Low Standby Supply Current . . . . . . . . . . . . . . . .100mA
• Low Operating Supply Current. . . . . . . . . . . . . . . 20mA
• Fast Address Access Time . . . . . . . . . . . . . . . . . . 150ns
• Low Data Retention Supply Voltage. . . . . . . . . . . . 2.0V
• CMOS/TTL Compatible Inputs/Outputs
• JEDEC Approved Pinout
• Equal Cycle and Access Times
• No Clocks or Strobes Required
• Gated Inputs
       - No Pull-Up or Pull-Down Resistors Required
• Temperature Range -55oC to +125oC
• Easy Microprocessor Interfacing
• Dual Chip Enable Control


Pinout




Specifications

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage Applied for all Grades . . . . . . .GND -0.3V to
                                                                                          V_CC +0.3V
Typical Derating Factor . . . . . . . . . . . ..  5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . Class 1


Description

The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Intersil 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input.

The HM-65642/883 is a full CMOS RAM which utilizes an array of six transistor (6T) memory cells for the most stable and lowest possible standby supply current over the full military temperature range. In addition to this, the high stability of the 6T RAM cell provides excellent protection against soft errors due to noise and alpha particles. This stability also improves the radiation tolerance of the RAM over that of four transistor or MIX-MOS (4T) devices